Open AccessELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅳ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN GaAs AND GaP
Author(s) -
Weimin Hu,
Deqiang Mao,
Ren Shang-Yuan,
Mingfu Li
Publication year - 1987
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.36.1330
Subject(s) - wave function , hamiltonian (control theory) , physics , semiconductor , condensed matter physics , quantum mechanics , atomic physics , mathematics , mathematical optimization
The wavefunctions of the A1 and E states of the ideal divacancy in GaAs, GaP are calculated using the basic equations given in ref. [1] and the tight-binding Hamiltonian given by P. Vogl et al. It is shown that the largest part of the wavefunctions of divacancy states is on the three nearest Ga atoms of the As or P vacancy, the rest part of the wavefunction decreases slowly and non-monotonically as the distance from the defect increases.