Open AccessA STUDY ON VALENCE-BAND PHOTOEMISSION SPECTRA OF NOBLE METAL-GaAs(110) INTERFACES
Author(s) -
Pan Shi-Hong,
Mo Dang,
K. K. Chyn,
W. E. Spicer
Publication year - 1987
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.36.1255
Subject(s) - noble metal , spectral line , valence band , materials science , valence (chemistry) , metal , atomic physics , band gap , physics , optoelectronics , quantum mechanics , metallurgy , astronomy
The evolution of valence hand photoemission spectra in the formation of noble metal-GaAs (110) interfaces has been studied with 21.2 eV and 40.8 eV photons. For less than 0.5 mono-layer of deposited metals, the so-called atomic-like Ag 5s and Au 6s states have been observed. A maximum in the emission of the valence band of noble metals has been observed in the range from about 10 ? to a few tens ? of deposited metals. The experiment results are discussed with the point of view of metal clustering associated with interfacial reaction.