Open AccessA TEM STUDY OF Pd-Si THIN FILM SOLID-PHASE REACTION
Author(s) -
Jing Zhang,
Ansheng Liu,
Ziqin Wang,
Kaihua Guo
Publication year - 1986
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.35.965
Subject(s) - silicide , materials science , annealing (glass) , epitaxy , thin film , layer (electronics) , chemical engineering , crystallography , composite material , nanotechnology , chemistry , engineering
The initial silicide formation during the deposition of Pd to room-temperature Si (111) substrate and the dependence of Pd2Si-Si orientation relationship on Pd film thickness have been studied by TEM. The results show that the only silicide phase formed is Pd2Si under annealing temperature from 170℃ to 600℃. A thin layer of Pd2Si has grown without annealing, even when the substrate is kept in room-temperature. The Pd film thinner than 100 nm leads to epitaxial Pd2Si layer on Si (111), while the Pd film of about 400 nm gives the [0001] Pd2Si fiber texture. Various kinds of defect with high density exist in the silicide film and the interface.