Open AccessTHE LOCAL DENSITY OF STATES FOR THE NARROW CHANNELS OF THE SEMICONDUCTOR SURFACE
Author(s) -
Hongjuan Ye
Publication year - 1986
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.35.939
Subject(s) - local density of states , oscillation (cell signaling) , density of states , semiconductor , conductivity , surface states , condensed matter physics , materials science , series (stratigraphy) , surface conductivity , surface (topology) , physics , optoelectronics , quantum mechanics , paleontology , geometry , mathematics , biology , genetics
In the sub-micron channels of semiconductor surface, it has been found that the conductivity has oscillation structure with gate voltage. We calculate the local density of states for the narrow channel by using Green function method and see that the density of states shows a series of sharp peaks, which can be used to explain qualitatively the conductivity oscillation.