Open AccessELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL
Author(s) -
Deqiang Mao,
Ren Shang-Yuan,
Mingfu Li
Publication year - 1986
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.35.808
Subject(s) - semiconductor , hamiltonian (control theory) , simple (philosophy) , physics , amorphous semiconductors , ideal (ethics) , tight binding , semiconductor materials , electronic band structure , electronic structure , condensed matter physics , quantum mechanics , mathematics , mathematical optimization , philosophy , thin film , epistemology
The energy levels of the ideal divacancy states in band gap for more than 10 cubic semiconductors are invesgated by using the basic equations given in ref. [1] and the tight binding Hamiltonian given by vogl et al. A simple physical model is used to describe the basic physics of the divacancy problem.