ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL | Zendy

Deqiang Mao | Zendy; REN SHANG-YUAN | Zendy; MingFu Li | Zendy

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ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL

Author(s) -

Deqiang Mao,

REN SHANG-YUAN,

MingFu Li

Publication year - 1986

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.35.808

Subject(s) - semiconductor , hamiltonian (control theory) , simple (philosophy) , physics , amorphous semiconductors , ideal (ethics) , tight binding , semiconductor materials , electronic band structure , electronic structure , condensed matter physics , quantum mechanics , mathematics , mathematical optimization , philosophy , thin film , epistemology

The energy levels of the ideal divacancy states in band gap for more than 10 cubic semiconductors are invesgated by using the basic equations given in ref. [1] and the tight binding Hamiltonian given by vogl et al. A simple physical model is used to describe the basic physics of the divacancy problem.

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