Open AccessDETERMINATION OF THE GAP STATE DISTRIBUTION IN a-Si:H BY THE METHOD OF INTERNAL PHOTOEMISSION TRANSIENT CURRENT TEMPERATURE SPECTROSCOPY
Author(s) -
苏子敏,
彭少麒
Publication year - 1986
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.35.731
Subject(s) - materials science , transient (computer programming) , photoemission spectroscopy , inverse photoemission spectroscopy , spectroscopy , field (mathematics) , angle resolved photoemission spectroscopy , current (fluid) , atomic physics , silicon , condensed matter physics , x ray photoelectron spectroscopy , analytical chemistry (journal) , physics , optoelectronics , electronic structure , nuclear magnetic resonance , chemistry , thermodynamics , quantum mechanics , mathematics , chromatography , computer science , pure mathematics , operating system
In this paper, we present a new method of determination of the gap state distribution in a-Si :H—the internal photoemission transient current temperature spectroscopy(IPETCTS). By this method, we suceeded in determining the GDOS distribution N(E) in a GD a-Si:H film. The result agrees in shape with that obtain ed from the typical field effect measurement, while the magnitude of the gap state density.obtained from the IPBTCTS is smaller by one to two orders than that from field effect measurement.