Open AccessLESR STUDIES ON DOPED A-Si1-xCx:H FILMS
Author(s) -
Guanghua Chen,
Fangqing Zhang,
Xu Xixiang,
A. Mokimoto,
Minoru Kumeda,
Tori Shimizu
Publication year - 1986
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.35.517
Subject(s) - doping , dangling bond , valence band , photoconductivity , materials science , condensed matter physics , band gap , nuclear magnetic resonance , optoelectronics , physics , silicon
In this paper, we describe the results of the equilibrium ESE and the LESE measurements in B- or P-doped a-Si1-xCx:H films at 77 K. To our knowledge, this is the first observation of the ESE of holes in the valence band tail for the films. The present LESE result shows that B-doping does not reduce the total density of dangling bonds including D+ and D-, although it improves the photoconductivity in a-Si1-xCx :H.