Open AccessTHE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001)
Author(s) -
HU Yongjun,
Zhien Lin,
ChangHeng Wang,
Kun Xie
Publication year - 1986
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.35.50
Subject(s) - x ray photoelectron spectroscopy , materials science , ion , sputtering , spectral line , layer (electronics) , chemical state , electronic structure , atomic physics , electron , analytical chemistry (journal) , nanotechnology , chemistry , thin film , nuclear magnetic resonance , physics , computational chemistry , quantum mechanics , astronomy , chromatography , organic chemistry
UPS, XPS, AES and LEED have been applied to study the samples prepared by low energy N+(0.5keV) sputtering slightly the clean cleaved surface of 2H-MoS2 (0001). From UPS (He Ⅰ, He II) spectra the shifts of EF of d band were observed. A "shoulder" or a band tail above the top of the d(z2) band raised with the time of ion bombardment so that the shape of the d(z2) band became broad. The new state showed chemically active to O2 exposure at room temperature. We propose that these shoulder states arise from the new unsaturate bonding d-electrons of Mo atoms around the vacancies of S at the outermost layer of the surface. This new surface electronic state may be correlated with the catalysis active site for hydrodesulfurization (HDS).