Open AccessGROWTH AND TRANSPORT PROPERTIER OF MODULATION DOPED GaAs/AlGaAs HETEROSTRUCTURES
Author(s) -
Jian Zhou,
Huang Yi,
Meng Qing-Hui,
Cheng Wen-Qin,
WU Yong-sheng,
Yongkang Li,
Yang Zhong-xing
Publication year - 1986
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.35.269
Subject(s) - heterojunction , molecular beam epitaxy , polaron , doping , quantum well , modulation (music) , condensed matter physics , materials science , fermi gas , electron mobility , effective mass (spring–mass system) , hall effect , magnetic field , quantum hall effect , shubnikov–de haas effect , electron , optoelectronics , physics , epitaxy , quantum oscillations , optics , nanotechnology , laser , layer (electronics) , quantum mechanics , acoustics
The high quality modulation doped GaAs/N-AlGaAs heterostructures have been grown by a vertical molecular beam epitaxy system (MBE). Electron mobility of two dimentional electron gas (2DBG) at 4.2 K has reached as high as 4.26×105cm2/V·s (in the dark) and 5.9×105cm2/V·s (under light illumination). The polaron mass of 2DEG was determined by analysis of oscillatory resistance change of magnetophonon resonance in pulsed magnetic field. The mobility enhancement of 2DEG in low field and quantum Hall effect in high field at 4.2 K were also studied.