Open AccessRELAXATION PROCESSES OF CARRIERS IN AMORPHOUS SEMICONDUCTOR SUPERLATTICES WITH MODULATEDLY DISTRIBUTED RECOMBINATION CENTERS
Author(s) -
ShiJie Xiong
Publication year - 1986
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.35.1624
Subject(s) - recombination , superlattice , amorphous semiconductors , semiconductor , relaxation (psychology) , carrier lifetime , amorphous solid , continuous time random walk , doping , materials science , free carrier , statistical physics , condensed matter physics , random walk , physics , optoelectronics , silicon , chemistry , mathematics , biology , biochemistry , statistics , neuroscience , gene , organic chemistry
We propose a continuous-time-random-walk model for a medium with moduiatedly distributed recombination centers to describe dynamical recombination processes of carriers in amorphous semiconductor superlattices. The survival probabilities of carriers are obtained in cases of different types of time distribution functions. Analysis of the results yields informations on the influences of the periodic potential wells and of the modulated doping on the macroscopic transport properties in this kind of artificial materials.