
RADIATIVE TRANSITION AND NONRADIATIVE PROCESS IN ZnS:Ho3+
Author(s) -
Yongrong Shen,
Hong Zhang
Publication year - 1986
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.35.1574
Subject(s) - radiative transfer , atomic physics , ion , excited state , intensity (physics) , emission intensity , physics , emission spectrum , relaxation (psychology) , radiation , materials science , optics , spectral line , social psychology , psychology , quantum mechanics , astronomy
The radiative transition and nonradiative process have been studied for Ho3+ ions in ZnS semiconductor. From the integrated emission intensity and excited state lifetime, the intensity uarameters of ZnS:Ho3+ were obtained and radiation probabilities and lifetimes of Ho3+ ion's nine energy levels were calculated. Nonradiative process among 5G6,3K8,5F2,5F3 and 5S2 ( 5F4) was investigated by measuring the emission intensity and fluorescence lifetime at differenttemperatures. 5G6, 3K8, 5F2 and 5F3 are in thermal equilibrium and there are 5 phononsparticipating in the multiphonon relaxation between 5F3 and 5S2( 5F4).