Open AccessELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅲ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN SI
Author(s) -
REN SHANG-YUAN,
Deqiang Mao,
MingFu Li
Publication year - 1986
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.35.1457
Subject(s) - wave function , hamiltonian (control theory) , semiconductor , condensed matter physics , spectral line , electronic structure , physics , atomic physics , materials science , quantum mechanics , mathematics , mathematical optimization
The wavefunctions of the Eu, state and the Eg state are evaluated for the ideal divacancy in Si, using the basic equations given in [1] and the tight binding Hamiltonian given by P. Vogl et al. Comparison between the culculated results and the ESR and ENDOR spectra of V2+ and V2- in Si is discussed.
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