Open AccessENERGY BAND CALCULATION FOR GaAs, GaP AND GaAsxP1-x
Author(s) -
薛舫时
Publication year - 1986
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.35.1315
Subject(s) - crystal (programming language) , band gap , atomic physics , energy (signal processing) , electronic band structure , spheres , materials science , atomic radius , potential energy , physics , molecular physics , condensed matter physics , quantum mechanics , astronomy , computer science , programming language
The energy bands of GaAs, GaP and GaAsxP1-x are calculated using the zone-variational method. Since there are different atoms in a cell, different radii are selected for various atomic spheres according to the actual size for corresponding atoms. The crystal potential is calculated by superposing various atomic potentials. Since the atomic potentials are distorted in the bonding sphere under the interaction with other atoms in crystal, a few adjusting parameters are selected to adjust the corresponding atomic potential and an analytical expression is used to approach the resulted potential. The potential adjusting parameters are selected to make the calculated energy band close to experimental results. The band structures which agree with experimental results are obtained for GaAs and GaP. Furthermore, these poteatials are used to calculate the energy band of GaAsxP1-x.