STUDY ON THE SHORT RANGE STRUCTURES OF BINARY AMORPHOUS ARSENIC-SELENIUM SYSTEM BY EXAFS | Zendy

Wencai Wang | Zendy; Sen-lin Ge | Zendy; Chen Yu | Zendy

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STUDY ON THE SHORT RANGE STRUCTURES OF BINARY AMORPHOUS ARSENIC-SELENIUM SYSTEM BY EXAFS

Author(s) -

Wencai Wang,

Sen-lin Ge,

Chen Yu

Publication year - 1986

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.35.1164

Subject(s) - arsenic , extended x ray absorption fine structure , selenium , materials science , amorphous solid , binary number , range (aeronautics) , crystallography , metallurgy , chemistry , physics , optics , absorption spectroscopy , composite material , arithmetic , mathematics

The EXAFS of amorphous semiconductor a-As2Se3, a-AsSe, a-As0.05 Se0.95 and a-As2Se3) after annealing at different temperatures lower than Tg are measured by 12 kW rotating anode X-ray diffraction equipment. Analyses of the determined radial structural functions shows that although the short range structure of a-As2Se3 is very similar to that for crystalline As2Se3, some changes take place in its radial structural function after annealing. The structural relaxation in a-As2Se3, quenched from melt, has also been observed. The short range structures for different components of As in binary As-Se system seem to be different.

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