Open AccessELECTRONIC STOPPING POWER OF B+ IMPLANTATION IN GaAs
Author(s) -
CHENG ZHAO-NIAN,
Weiyuan Wang
Publication year - 1985
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.34.968
Subject(s) - stopping power , range (aeronautics) , statistic , atomic physics , materials science , computational physics , physics , statistics , mathematics , ion , quantum mechanics , composite material
Based on published experimental data of Rp, a proposed relative correction method combining with numerical solution program of LSS equation was used to calculate the electronic stopping power of B+ implantation in GaAs, as follows NSe(E) = 12.4E0.605,Using this expression, the range statistic parameters Rp,△Rp and R⊥for B+ implanted GaAs were calculated.
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