Open AccessANNEALING PROPERTIES OF GOLD-DOPED AND UNDOPED Si-SiO2 INTERFACES IN DRY OXYGEN
Author(s) -
Si-Yuan Li,
Tongjun Zhang,
Wang Iu-Zhen,
Li Shou-Song,
Yin Zhi-Ping
Publication year - 1985
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.34.715
Subject(s) - annealing (glass) , materials science , oxidizing agent , oxygen , doping , silicon , analytical chemistry (journal) , optoelectronics , metallurgy , chemistry , environmental chemistry , organic chemistry
After annealing treatment in dry oxygen, the variations of the surface charges, the interface state densities and the state density distributions in the band gap, of both Au-doped and undoped Si-SiO2 interfaces were studied experimently. The annealing behavior of the negative electric effects of gold was also investigated. Furthermore, this paper presents the compared results of the electric properties of the Si-SiO2 interfaces (including both Au-doped and undoped interfaces) formed by thermo-oxidizing silicon in dry oxygen at various temperatures and gone through annealing in dry oxygen at the same temperatures.