Open AccessAN ELECTRON SPECTROSCOPY STUDY OF THE In/GaAs (111) INTERFACE FORMATION PROCESS
Author(s) -
Ding Xun-Min,
Guangjiong Dong,
Shu Yang,
Ping Chen,
Xun Wang
Publication year - 1985
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.34.634
Subject(s) - materials science , fermi level , photoemission spectroscopy , x ray photoelectron spectroscopy , deposition (geology) , electron , condensed matter physics , atomic physics , physics , nuclear magnetic resonance , paleontology , sediment , biology , quantum mechanics
The interface formation process for In deposited on noncleaved GaAs (111) plane has been studied by means of photoemission speetroscopy combined with LEED pattern analysis. It is shown that the growth of three-dimensional In clusters dominates in this process. The surface Fermi level is found at 0.75±0.05 eV above VBM for all the investigated n-type samples prior to the deposition of In: these include both Ga-terminated GaAs(lll)-A and Asterminated GaAs (lll)-B faces. The Fermi level rapidly shifts to 0.90±0.05 eV above VBM during the deposition of In.