Open AccessPHOTO-INDUCED DEGRADATION OF UNDOPED AMORPHOUS SILICON HYDRIDE PREPARED BY D. C. GLOW-DISCHARGE DEPOSITION TECHNIQUE
Author(s) -
Wu Dao-Huai,
Ye Jian-Ming,
Huiying Pan,
Cheng Ru-Guang
Publication year - 1985
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.34.253
Subject(s) - materials science , annealing (glass) , band bending , amorphous silicon , band gap , silicon , glow discharge , hydride , amorphous solid , optoelectronics , deposition (geology) , analytical chemistry (journal) , crystalline silicon , composite material , plasma , metallurgy , chemistry , crystallography , physics , chromatography , quantum mechanics , metal , paleontology , sediment , biology
Effect of annealing and light illumination on electrical and optical properties of undoped a-Si :H films were studied. The surface energy band bending is created by H20 adsorbats in order to compare the difference between annealing state and light illumination state. The results show that the density of gap state has been increased by light illumination.