PHOTO-INDUCED DEGRADATION OF UNDOPED AMORPHOUS SILICON HYDRIDE PREPARED BY D. C. GLOW-DISCHARGE DEPOSITION TECHNIQUE | Zendy

WU DAO-HUAI | Zendy; YE JIAN-MING | Zendy; Huiying Pan | Zendy; Cheng Ruguang | Zendy

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PHOTO-INDUCED DEGRADATION OF UNDOPED AMORPHOUS SILICON HYDRIDE PREPARED BY D. C. GLOW-DISCHARGE DEPOSITION TECHNIQUE

Author(s) -

WU DAO-HUAI,

YE JIAN-MING,

Huiying Pan,

Cheng Ruguang

Publication year - 1985

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.34.253

Subject(s) - materials science , annealing (glass) , band bending , amorphous silicon , band gap , silicon , glow discharge , hydride , amorphous solid , optoelectronics , deposition (geology) , analytical chemistry (journal) , crystalline silicon , composite material , plasma , metallurgy , chemistry , crystallography , physics , chromatography , quantum mechanics , metal , paleontology , sediment , biology

Effect of annealing and light illumination on electrical and optical properties of undoped a-Si :H films were studied. The surface energy band bending is created by H20 adsorbats in order to compare the difference between annealing state and light illumination state. The results show that the density of gap state has been increased by light illumination.

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