RESPONSE OF THE MINORITY CARRIER IN THE SEMICONDUCTORS DLTS UNDER MAJORITY CARRIER PULSE CONDITION | Zendy

FU CHUN-YIN | Zendy; Yongling Lu | Zendy; ZENG SHU-RONG | Zendy

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RESPONSE OF THE MINORITY CARRIER IN THE SEMICONDUCTORS DLTS UNDER MAJORITY CARRIER PULSE CONDITION

Author(s) -

FU CHUN-YIN,

Yongling Lu,

ZENG SHU-RONG

Publication year - 1985

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.34.1559

Subject(s) - carrier lifetime , charge carrier , materials science , semiconductor , doping , depletion region , optoelectronics , silicon , free carrier , space charge , carrier signal , semiconductor materials , charge carrier density , electron , physics , telecommunications , computer science , quantum mechanics , transmission (telecommunications)

A minority earlier peak is discovered in the DLTS of a silicon p+n junction doped with gold under majority carrier pulse condition. The major experimental results and systematic physical analyses is presented. We show, that the minority carrier peak is a result due to the capture of a free minority carrier tail from the side of the heavily doped region of the p+n junction at the mincrirty carrier traps in the space charge region, which is built by the built-in potential, and its subsequent emission.

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