Open AccessRESPONSE OF THE MINORITY CARRIER IN THE SEMICONDUCTORS DLTS UNDER MAJORITY CARRIER PULSE CONDITION
Author(s) -
Fu Chun-Yin,
Yongling Lu,
Zeng Shu-Rong
Publication year - 1985
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.34.1559
Subject(s) - carrier lifetime , charge carrier , materials science , semiconductor , doping , depletion region , optoelectronics , silicon , free carrier , space charge , carrier signal , semiconductor materials , charge carrier density , electron , physics , telecommunications , computer science , quantum mechanics , transmission (telecommunications)
A minority earlier peak is discovered in the DLTS of a silicon p+n junction doped with gold under majority carrier pulse condition. The major experimental results and systematic physical analyses is presented. We show, that the minority carrier peak is a result due to the capture of a free minority carrier tail from the side of the heavily doped region of the p+n junction at the mincrirty carrier traps in the space charge region, which is built by the built-in potential, and its subsequent emission.