Open AccessSCALING RELATION OF GENERALIZED OSCILLATOR STRENGTH DENSITY ALONG ISOELECTRONIC SEQUENCE
Author(s) -
Pan Xiao-Chuan,
Jiaming Li
Publication year - 1985
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.34.1500
Subject(s) - oscillator strength , excitation , excited state , atomic physics , scaling , physics , lithium atom , ion , atom (system on chip) , electron ionization , cross section (physics) , quantum mechanics , ionization , mathematics , geometry , spectral line , computer science , embedded system
The differential cross section and total cross section of high-energy electron impact excitation can be calculated by Born approximation. The differential cross section is propotional to the so called generalized oscillator strength. The target atom or ion may be excited to infinite number of bound states and adjoint continuum states which can be treated in an unified manner by Quantum Defect Theory. Thus, we define generalized oscillator strength density (GOSD) as the generalized oscillator strength per unit of excitation energy. We have calculated the GOSD's of the lithium-like isoelectronic se-quence(Li, Be+, B++, C3+, Ne7+, Na8+, K16+) for excitation from the ground state to S, P, D and F channels. The scaling relation along isoelectronic sequence is discussed.