Open AccessTHE TOTAL VOLUME FRACTION OF VOIDS OF RF SPUTTERED AMORPHOUS SILICON
Author(s) -
Fei Qing-Yu,
Huang Bing-Zhong
Publication year - 1985
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.34.1413
Subject(s) - volume fraction , materials science , volume (thermodynamics) , silicon , amorphous solid , amorphous silicon , ellipsometry , fraction (chemistry) , analytical chemistry (journal) , composite material , thin film , thermodynamics , crystalline silicon , nanotechnology , crystallography , metallurgy , chemistry , physics , organic chemistry , chromatography
The principle and method of measurement and calculation of the total volume fraction of voids of RF sputtered amorphous silicon by speetroscopic ellipsometry and effective medium theory is described. It is found that the changes in the electrical and optical properties among amorphous silicon films deposited in different argon pressure may be satisfactorily explained in terms of changes in the total volume fraction of voids. This suggests that it is significant to measure and calculate the total volume fraction of voids of a-Si. The good agreement between the result of total volume fraction of voids and the measured result of total volume fraction occupied by Ar atoms shows the validity of the method.