Open AccessHYDROSTATIC PRESSURE DEPENDENCE OF GOLD ACCEPTOR LEVELS IN Si
Author(s) -
Mingfu Li,
Jianxin Chen,
Yonghong Yao,
Guang Bai
Publication year - 1985
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.34.1068
Subject(s) - hydrostatic pressure , materials science , acceptor , pressure coefficient , hydrostatic equilibrium , silicon , condensed matter physics , thermodynamics , optoelectronics , physics , quantum mechanics
The hydrostatic pressure coefficient of gold acceptor levels Er in Silicon was measured by transient capacitance method. Under the pressure range of 0-8 Kbar, thepressure coefficient (?(Ec-ET))/(?P) =-1.9 meV/kbar. The electron capture cross section of gold acceptor centers does not depend on pressure within the experimental accuracy. By comparing the present result of hydrostatic pressure coefficient with the uniaxial pressure coefficient reported in [13], we conclude that the defect potential is lack of Td symmetry. Therefore, the gold acceptor levels are not originated by simple gold substitutional or interstitial configuration in Si crystals.