Open AccessSTATISTICAL THEORY OF DEFECTS AND INPURITIES IN AMORPHOUS SEMICONDUCTORS
Author(s) -
Guanghua Chen,
Huichun Liu
Publication year - 1984
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.33.93
Subject(s) - amorphous semiconductors , semiconductor , dangling bond , condensed matter physics , amorphous solid , doping , materials science , fermi level , fermi gamma ray space telescope , electron , statistical physics , physics , quantum mechanics , nanotechnology , silicon , thin film , chemistry , optoelectronics , crystallography
This article discusses doping effects in amorphous semiconductors, especially the properties at low temperatures, using the method of statistical physics. With approximation of single dangling bond, the positions of Fermi level and the electron densities have been calculated for two groups of amorphous semiconductors.