STUDY OF HYDROGEN-INDUCED DEFECTS IN FLOATING ZONE SILICON GROWN IN HYDROGEN ATMOSPHERE | Zendy

MAI ZHEN-HONG | Zendy; CUI SHU-FAN | Zendy; LIN JIAN | Zendy; Lü YAN | Zendy

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STUDY OF HYDROGEN-INDUCED DEFECTS IN FLOATING ZONE SILICON GROWN IN HYDROGEN ATMOSPHERE

Author(s) -

MAI ZHEN-HONG,

CUI SHU-FAN,

LIN JIAN,

Lü YAN

Publication year - 1984

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.33.921

Subject(s) - hydrogen , silicon , materials science , annealing (glass) , atmosphere (unit) , crystallographic defect , crystallography , chemistry , composite material , optoelectronics , meteorology , physics , organic chemistry

The relationship between the annealing temperatures and the hydrogen-induced defects in floating zone silicon grown in hydrogen atmosphere has been investigated by X-ray section topography. According to the analysis of X-ray topographic patterns of the early stage hydrogen-induced defects, it is found that the lattices around hydrogen precipitates are under compression. The processes of the breakdown of silicon-hydrogen bonds and the formation of hydrogen-induced defects are discussed briefly.

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