Open AccessSTUDY OF HYDROGEN-INDUCED DEFECTS IN FLOATING ZONE SILICON GROWN IN HYDROGEN ATMOSPHERE
Author(s) -
Mai Zhen-Hong,
Cui Shu-Fan,
Lin Jian,
Yan Lu
Publication year - 1984
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.33.921
Subject(s) - hydrogen , silicon , materials science , annealing (glass) , atmosphere (unit) , crystallographic defect , crystallography , chemistry , composite material , optoelectronics , meteorology , physics , organic chemistry
The relationship between the annealing temperatures and the hydrogen-induced defects in floating zone silicon grown in hydrogen atmosphere has been investigated by X-ray section topography. According to the analysis of X-ray topographic patterns of the early stage hydrogen-induced defects, it is found that the lattices around hydrogen precipitates are under compression. The processes of the breakdown of silicon-hydrogen bonds and the formation of hydrogen-induced defects are discussed briefly.