TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL | Zendy

Y. Gao | Zendy

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TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL

Author(s) -

Y. Gao

Publication year - 1984

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.33.840

Subject(s) - materials science , dislocation , burgers vector , climb , crystallography , stacking fault , oxygen , precipitation , stacking , punching , condensed matter physics , metallurgy , composite material , nuclear magnetic resonance , thermodynamics , chemistry , physics , organic chemistry , meteorology

In this paper, oxygen precipitates and induced defects in annealed dislocation-free CZ-Si with high oxygen content have been investigated by HVEM. The oxygen precipitates are spherical crystobalite at 750-1050℃. In addition to spherical precipitates, there are some square plate-like oxygen precipitates with {001} habit plane. Punching prismatic dislocation loops are emitted from oxygen precipitates along 〈110〉 directions above 950℃.The loops are interstitial loops with Burgers vector α/2〈110〉 and axis 〈110〉.The loops are generated by a square plate-like precipitate or by a cluster of spherical precipitates. When dislocation loop encounters obstacle, the complex dislocation configuration may be produced. A stage in a stacking fault has been observed, it is formed by climb of the stacking fault. If treatment temperature is below 850℃, no bulk stacking fault results.

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