Open AccessTHE PHOTOLUMINESCENCE SPECTRA OF N+, Zn+ IMPLANTED GaAs1-xPx AT 1.8-4.2 K
Author(s) -
Xu Jun-Ying,
Chen Liang-hui,
Gong Ji-shu,
Zhijun Xu,
Zhuang Wei-Hua,
Yuzhang Li,
Jian Xu,
Wu Ling-Xi
Publication year - 1984
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.33.833
Subject(s) - photoluminescence , impurity , recombination , spectral line , zinc , materials science , exciton , analytical chemistry (journal) , alloy , condensed matter physics , physics , chemistry , optoelectronics , biochemistry , chromatography , astronomy , metallurgy , gene , quantum mechanics , composite material
The photoluminescent behavior of N+ and Zn+ implanted GaAs1-xPx has been investigated at 4.2 K. The experimental results show that the alloy composition x, at which N-Zn transition completely becomes N bound excitonic recombination, depends on the nitrogen and zinc impurity concentration.Using Campbell localized model, we calculated the probability ratio of N-Zn transition to N bound excitonic recombination as a function of composition and N, Zn impurity concentration.At 1.8 K, we have clearly observed the typical spectra of N-Zn transition and N bound excitonic recombination in the same sample.