ON THE HIGH ORDER OPTICAL PROPERTIES OF NARROW-GAP SEMICONDUCTOR IN A MAGNETIC FIELD (Ⅱ) | Zendy

LIU SHU-ZHENG | Zendy

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ON THE HIGH ORDER OPTICAL PROPERTIES OF NARROW-GAP SEMICONDUCTOR IN A MAGNETIC FIELD (Ⅱ)

Author(s) -

LIU SHU-ZHENG

Publication year - 1984

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.33.1640

Subject(s) - faraday effect , semiconductor , magnetic field , condensed matter physics , physics , narrow gap semiconductor , nonlinear system , faraday rotator , photon , rotation (mathematics) , field (mathematics) , optics , band gap , optoelectronics , quantum mechanics , pure mathematics , geometry , mathematics

In this paper, the third order optical nonlinearity of narrow-gap semiconductor near two-photon resonance in a magnetic field is discussed. The theoretical positions and relative strengths of the peaks of nonlinear Faraday rotation and Voigt phase shift near the gap edge are obtained.

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