Open AccessDEEP LEVELS OF TRANSITION IMPURITIES IN SILICON
Author(s) -
Xia Jian-Bai
Publication year - 1984
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.33.1418
Subject(s) - impurity , atom (system on chip) , silicon , materials science , condensed matter physics , valence (chemistry) , atomic physics , wave function , semiconductor , anderson impurity model , dangling bond , physics , quantum mechanics , optoelectronics , computer science , metallurgy , embedded system
A simple model about transition impurities in semiconductors is proposed, and the impurity energy levels and wave functions produced by substitutional and interstitial atoms in silicon are calculated by Green's function method. It is shown that the properties of these two kinds of impurities are remarkably different. The substitutional atom can produce impurity energy level only when Vd, the atomic level of d state, is below the top of valence band. It's wave function is mainly dangling bond state, and gradually turns into bond state when the energy level approaehs the edge of conduction band. The interstitial atom can produce impurity energy level only when Vd is above the top of valence band. It's wave function is mainly d state of central atom and gradually turns into weak antibond state. Finally, the chemical trend and some experimental facts of transition impurity energy levels are qualitatively explained.