Open AccessGENERALIZED OSCILLATOR STRENGTH DENSITY
Author(s) -
Tian Bo-Gang,
Jiaming Li
Publication year - 1984
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.33.1401
Subject(s) - oscillator strength , physics , excitation , excited state , atomic physics , atom (system on chip) , born approximation , momentum transfer , electron , quantum mechanics , computer science , scattering , embedded system , spectral line
The total cross section and differential cross section of high-energy electron impact excitation can be calculated with Born approximation. The differential cross section is proportional to the so called generalized oscillator strength. The target atom or ion may be excited to infinite bound states, auto-ionizing states and adjoint continuum states which can be treated in an unified manner by Multichannel Quantum Defect Theory. Thus, we can define the generalized oscillator strength density as the strength per unit excitation energy. Taking the lithium atom as an example, we present here a summary of the variations of the generalized oscillator strength density with respect to excitation energy as well as momentum transfer. Comparing with recent accurate experimental data, the validity of Born approximation is discussed.