Open AccessOBSERVATION ON “AS GROWN” MICRODEFECTS IN CZ SILICON SINGLE CRYSTAL
Author(s) -
Mai Zhang,
Shujuan Cui,
Quangui Fu,
Lin Ru-Gan,
Jinfu Zhang
Publication year - 1983
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.32.685
Subject(s) - silicon , materials science , crystal (programming language) , etching (microfabrication) , single crystal , type (biology) , monocrystalline silicon , crystallography , optics , optoelectronics , nanotechnology , physics , layer (electronics) , chemistry , geology , paleontology , computer science , programming language
Two different type of microdefects have been observed by means of Cu-decorating X-ray topography and etching method in p-type silicon single crystal grown along and/or n-type ones grown along direction. A kind of defects with special configuration has also been found in n-type silicon single crystal. The distribution and configuration of these defects are discussed preliminarily.It was the first time to investigate the "as grown" microdefects in silicon single crystal grown by Czochraski method directly by means of X-ray transmission projection and/or section topography. X-ray topographs of microdefects in CZ silicon crystal were obtained. The configuration, size and distribution of the microdefects observed were in agreement with that obtained by Cu-decorating X-ray topography quite well.