Open AccessTHE ATOMIC STRUCTURE AND ELECTRONIC STATES OF GaAs1-xPx (110)
Author(s) -
Xu Yong-Nian,
Kaiming Zhang
Publication year - 1983
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.32.247
Subject(s) - conduction band , materials science , cluster (spacecraft) , condensed matter physics , electronic structure , relaxation (psychology) , enhanced data rates for gsm evolution , atomic physics , physics , nuclear physics , electron , programming language , telecommunications , psychology , social psychology , computer science
In this paper, the clean surface GaAs1-xPx(110) has been studied by the EHT method using a cluster model. We obtained the following results: (1) the value of the rotated relaxation angle is about 26°. (2) For x≥0.25 the empty intrinsic cation states are found in the gap near the conduction band edge.