Open AccessAN INVESTIGATION OF Al/GaAs INTERFACE REACTION BY XPS
Author(s) -
Dai Dao-Xuan,
Tang Hou-Shun,
Ni Yu-Hong,
Yu Xi-Tong
Publication year - 1983
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.32.1328
Subject(s) - x ray photoelectron spectroscopy , substrate (aquarium) , materials science , layer (electronics) , deposition (geology) , atom (system on chip) , chemical engineering , nanotechnology , computer science , paleontology , oceanography , sediment , geology , biology , engineering , embedded system
After deposition of a layer of super-thin A film on a clean disordered GaAs surface, the Al/GaAs interface reaction is studied by XPS. The results show that the Al atom can penetrate into GaAs substrate to form AlAs with freed Ga left on GaAs substrate surface by Al-Ga replacement reaction. A Ga/AlAs + GaAs/GaAs three layer model is proposed.