Open AccessUSING MOS STRUCTURE TO STUDY THE DEEP LEVEL OF QUARTERNARY MIXED CRYSTAL In0.75Ga0.25As0.58P0.42
Author(s) -
Bao Qing-Cheng,
Qiming Wang,
Peng Huai-De,
Zhu Long-De,
Gao Ji-Lin
Publication year - 1983
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.32.1220
Subject(s) - materials science , electron , conduction band , semiconductor , conduction electron , crystal (programming language) , electronic band structure , thermal conduction , condensed matter physics , optoelectronics , physics , composite material , nuclear physics , computer science , programming language
By means of MOS-DLTS method, two electron traps in LPE n-type In0.75Ga0.25As0.58P0.42 material have been observed. Their depths are 0.20 eV and 0.48 eV below conduction band, and capture cross sections of electrons are about 14×10-16cm2 and 3.8×10-12cm2, respectively.Some discussion on the method applied to studying DLTS of multilayer composition semiconductor materials are also given.