CALCULATION OF RANGE STATISTIC PARAMETERS FOR IONS IMPLANTED IN GaAs | Zendy

CHENG ZHAO-NIAN | Zendy; Wenyu Zhu | Zendy; Weiyuan Wang | Zendy

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CALCULATION OF RANGE STATISTIC PARAMETERS FOR IONS IMPLANTED IN GaAs

Author(s) -

CHENG ZHAO-NIAN,

Wenyu Zhu,

Weiyuan Wang

Publication year - 1982

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.31.922

Subject(s) - statistic , range (aeronautics) , divergence (linguistics) , ion , computation , computational physics , simple (philosophy) , mathematics , computer science , algorithm , physics , atomic physics , statistics , materials science , quantum mechanics , linguistics , philosophy , epistemology , composite material

Based on successive correction method, we have solved LSS equation numerically and calculated the range statistic parameters Rp,△Rp and R⊥ for ions implanted in GaAs. We propose simple formulas for initial values in calculating Rp,△Rp and R⊥; by using these formulas, the zero-energy divergence can be avoided and sufficient accuracy achieved. The expressions for β-integration are given to save computation time. Our numerical method and computer program can also be used to other ion-target systems.

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