Open AccessON THE THIRD ORDER OPTICAL NONLINEARITY OF SEMICONDUCTORS NEAR ITS ABSORPTION EDGE
Author(s) -
Zizhao Gan,
Yang Guo-Zhen
Publication year - 1982
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.31.237
Subject(s) - semiconductor , absorption edge , nonlinear system , refractive index , saturation (graph theory) , nonlinear optical , materials science , absorption (acoustics) , enhanced data rates for gsm evolution , nonlinear optics , condensed matter physics , physics , optics , optoelectronics , quantum mechanics , mathematics , telecommunications , band gap , combinatorics , computer science
A theory is proposed about the third order optical nonlinearity which is induced by the saturation effect of interband transitions in semiconductors near the absorption edge. The value of the exceptionally large nonlinear refractive index of InSb is given.