Open AccessOBSERVATION OF DEFECTS IN β-SILICON CARBIDE EPITAXIAL FILM
Author(s) -
Chucai Guo
Publication year - 1982
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.31.1526
Subject(s) - materials science , stacking , partial dislocations , stacking fault , crystallography , dislocation , etching (microfabrication) , epitaxy , silicon carbide , crystal (programming language) , condensed matter physics , layer (electronics) , composite material , computer science , physics , chemistry , nuclear magnetic resonance , programming language
The defects in β-SiC epitaxial film are studied by means of etching method. The etchant used is the fused alkali hydroxide. The triangular etch pits with sharp bottom correspond to the dislocations. The perfect dislocations in β-SiC crystal are 73° dislocations and 60° dislocations. In β-SiC crystal there exists {111} boundary stacking fault formed by the contact of two β-SiC growing layer having different stacking sequences. The etching figure of the stacking fault is straight line running parallel to the 〈110〉 direction. The 60° dislocations can dissociate into two 1/6〈112〉 Schockley dislocat'ions and these two partial dislocations with a {111} stacking fault form an extensive dislocation. Three 1/6(110} stair-rod dislocations and three {111} stacking faults construct a stacking fault pyramid. Two parts of β-SiC film having positive and negative stacking sequence can produce a twin with the twin plane (111). The results of etching method and X-ray Laue method confirme the existence of the twin of this type.