Open AccessDISLOCATION ETCH PITS ON THE {111} CRYSTAL PLANE OF InSb FORMED BY HCl-Fe+++ SOLUTION
Author(s) -
Ke Ma,
Yu Zhen-Zhong,
Gang Jin,
Cao Ju-Ying
Publication year - 1982
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.31.1285
Subject(s) - dislocation , materials science , dissolution , dislocation creep , crystal (programming language) , crystallography , etch pit density , condensed matter physics , isotropic etching , slip (aerodynamics) , etching (microfabrication) , plane (geometry) , geometry , composite material , chemistry , physics , thermodynamics , mathematics , layer (electronics) , computer science , programming language
The fine structure of the dislocation pits, which are formed by HCl-Fe+++ etching solution, is observed experimentally. The correlation between structure features of the dislocation pits and the directions as well as slip planes of the dislocations is investigated. We discussed the kinetic processes in which the etch pits are formed. The results indicated that different rate of nueleation and velocity of lateral motion on the dissolution steps of 〈112〉and〈112〉 crystal orientations is the main reason which makes the dislocation pits have two kinds of dissolute edges with different features.