Open AccessTHE INFLUENCE OF THE INTERFACE STATE ON THE PROPERTIES OF SOLAR CELL SEMICONDUCTOR ELECTRODES
Author(s) -
Zhien Lin,
Zhou Pei-Zhen,
Chen Yun-Qi,
Deng Hui-Guo,
Qi Shang-Xue,
Wang Chang-Heng,
Kun Xie
Publication year - 1982
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.31.1198
Subject(s) - semiconductor , materials science , photoluminescence , electrode , solar cell , fermi level , optoelectronics , photoelectric effect , condensed matter physics , density of states , valence (chemistry) , substrate (aquarium) , electron , chemistry , physics , oceanography , organic chemistry , quantum mechanics , geology
An n-Fe2O3 film was grown on a n-Si substrate which had undergone surface treatment to form a double layer semiconductor electrode. The influence of the interface state on the electrode properties was studied. From photoluminescence measurements, we found that an interface state with high density of states exists lying above the top of the Fe2O3 valence band at 1.61 eV. The Fermi level is pinned by this interface state.Using energy band profiles, we give an explanation for the photoluminescence, as well as a theoretical calculation and analysis for the capacity-voltage curves and photo-current-voltage curves. These theoretical calculated curves agree well with the experimental data. This double layer semiconductor electrode with an interface state with high density of states is a promising material for solar cells of good stability and high photoelectric conversion efficiency.