Open AccessA PROPOSAL OF DOUBLE HETEROJUNCTION DOUBLE DRIFT-REGION InP/InGaAsP/InP AVALANCHE DIODE
Author(s) -
Yufen Yang
Publication year - 1981
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.30.794
Subject(s) - heterojunction , optoelectronics , materials science , diode , indium phosphide , double heterostructure , avalanche diode , signal (programming language) , voltage , gallium arsenide , breakdown voltage , semiconductor laser theory , electrical engineering , computer science , programming language , engineering
In this article, a double heterojunction double drift-region InP/InGaAsP/InP avalanche diode is proposed. The analysis manifests: the voltage madulation depth is 100% corresponding to efficiency of 64%. The small signal theory analysis of the device impedance is also given.