Open AccessDYNAMIC REFLECTION PROPERTY OF ION-IMPLANTED Si BY CW CO2 LASER ANNEALING
Author(s) -
Yuan-Heng Li
Publication year - 1981
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.30.542
Subject(s) - materials science , laser , ion , annealing (glass) , irradiation , ion implantation , optoelectronics , optics , reflectivity , reflection (computer programming) , infrared , composite material , chemistry , physics , organic chemistry , computer science , nuclear physics , programming language
The change of reflectivity of P-implanted Si with time under high power CW CO2 laser irradiation has been measured by infrared detector. We discover that the reflectivity increases irreversibly in both the laser heating and cooling processes. This means that the surface carrier concentration of ion-implanted Si would change similarly.