Open AccessTIGHT-BINDING CALCULATION FOR GaAs (110) SURFACE
Author(s) -
Xu Yong-Nian
Publication year - 1981
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.30.1400
Subject(s) - slab , tight binding , surface (topology) , materials science , crystal (programming language) , condensed matter physics , work (physics) , layer (electronics) , molecular physics , physics , geometry , electronic structure , thermodynamics , nanotechnology , geophysics , mathematics , computer science , programming language
In the present work, the tight-binding calculation for the rotational relaxed GaAs (110) surface is studied. In order to simulate the semi-infinite crystal, a saturating slab model is adopted with the last layer of which being saturated by some quasi As and Ga atoms, so that the slab model can be considered as having one surface only. The LDOS thus obtained agrees well with that given by the conventional slab model.