TIGHT-BINDING CALCULATION FOR GaAs (110) SURFACE | Zendy

XU YONG-NIAN | Zendy

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TIGHT-BINDING CALCULATION FOR GaAs (110) SURFACE

Author(s) -

XU YONG-NIAN

Publication year - 1981

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.30.1400

Subject(s) - slab , tight binding , surface (topology) , materials science , crystal (programming language) , condensed matter physics , work (physics) , layer (electronics) , molecular physics , physics , geometry , electronic structure , thermodynamics , nanotechnology , geophysics , mathematics , computer science , programming language

In the present work, the tight-binding calculation for the rotational relaxed GaAs (110) surface is studied. In order to simulate the semi-infinite crystal, a saturating slab model is adopted with the last layer of which being saturated by some quasi As and Ga atoms, so that the slab model can be considered as having one surface only. The LDOS thus obtained agrees well with that given by the conventional slab model.

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