Open AccessTHE CHEMISORPTION OF CI ON THE GaAs(110) SURFACE
Author(s) -
Kaiming Zhang,
Ling Ye
Publication year - 1981
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.30.1117
Subject(s) - chemisorption , surface (topology) , materials science , atom (system on chip) , ion , adsorption , atomic physics , work (physics) , molecular physics , condensed matter physics , chemical physics , chemistry , physics , thermodynamics , quantum mechanics , geometry , mathematics , computer science , embedded system
There are twe problems involved in the C1 chemisorption on the GaAs (110) surface, one is whether Cl adsorbs on the relaxed surface or on the unrelaxed one, while the other is whether Cl bonded with the surface anion or with the cation. The present work indicates that the Cl atom adsorbs on the relaxed GaAs (110) surface and is bonded with the surface As. The density of states calculated from this configuration seems to agree well with existing experimental results.