Open AccessMOTION OF ISOLATED DISLOCATIONS IN SILICON CRYSTALS
Author(s) -
Ba Tu,
Yizhen He
Publication year - 1980
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.29.698
Subject(s) - dislocation , materials science , isotropic etching , condensed matter physics , silicon , motion (physics) , measure (data warehouse) , atmospheric temperature range , range (aeronautics) , partial dislocations , dislocation creep , etching (microfabrication) , crystallography , optics , physics , classical mechanics , thermodynamics , composite material , optoelectronics , chemistry , layer (electronics) , database , computer science
Chemical etching method was used to measure the velocity of isolated dislocations in silican crystals for temperatures in the range of 400-900℃ and under stresses in the range of 0.35-13kg·mm-2. Dislocation Velocity v(τ, T) as a function of temperature (T) and stress (τ) satisfies the following equation v(τ,T)=Aτme-Q/(KT) where m = 1.02-1.49, Q = 1.96-2.07eV. Finally, the experimental results obtained on the motion of dislocations in silican single crystals were compared with those derived from the kink model of extended dislocation.