MOTION OF ISOLATED DISLOCATIONS IN SILICON CRYSTALS | Zendy

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MOTION OF ISOLATED DISLOCATIONS IN SILICON CRYSTALS

Author(s) -

BA TU,

Yizhen He

Publication year - 1980

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.29.698

Subject(s) - dislocation , materials science , isotropic etching , condensed matter physics , silicon , motion (physics) , measure (data warehouse) , atmospheric temperature range , range (aeronautics) , partial dislocations , dislocation creep , etching (microfabrication) , crystallography , optics , physics , classical mechanics , thermodynamics , composite material , optoelectronics , chemistry , layer (electronics) , database , computer science

Chemical etching method was used to measure the velocity of isolated dislocations in silican crystals for temperatures in the range of 400-900℃ and under stresses in the range of 0.35-13kg·mm-2. Dislocation Velocity v(τ, T) as a function of temperature (T) and stress (τ) satisfies the following equation v(τ,T)=Aτme-Q/(KT) where m = 1.02-1.49, Q = 1.96-2.07eV. Finally, the experimental results obtained on the motion of dislocations in silican single crystals were compared with those derived from the kink model of extended dislocation.

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