Open AccessIMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION
Author(s) -
Xia Ri-Yuan
Publication year - 1980
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.29.566
Subject(s) - materials science , impurity , annealing (glass) , recrystallization (geology) , ion , diffusion , ion implantation , dislocation , diffusion equation , amorphous solid , grain boundary , silicon , grain boundary diffusion coefficient , condensed matter physics , effective diffusion coefficient , thermodynamics , crystallography , composite material , microstructure , chemistry , physics , metallurgy , economy , service (business) , magnetic resonance imaging , biology , paleontology , radiology , medicine , organic chemistry , economics
A model of impurity precipitate-dislocation generation, impurity atom-dislocation interaction and impurities rapid diffusion along grain boundaries has been used to explain the out-diffusion behaviour of implanted impurities and defect movement in the amorphous layers due to high dose ion implantation during reerystallization annealing. Taking the resultant stress effect of the dislocations in to account, the diffusion equation of impurities has been established. By using Pb+ ions with energy of 80 keV implanted in (111) silicon to the dose of 1016cm-2 as an example, a mathematical and physical treatment of the diffusion equation has been carried out. Thereby a method of deducing the apparent diffusion coefficient varying with time and the longitudinal profile of the force exerted by the resultant stress of dislocations on the impurities according to the experimental measurements has been proposed. The measured constant of interaction between dislocations and impurities, α, is α≈8.4×10-28dyn·cm3, and the time variation of the apparent diffusion coefficient D in a time interval can be expressed as a exponential function.