THE CHEMISORPTION OF AI ON THE GaAs(110) SURFACE | Zendy

Kaiming Zhang | Zendy; Ling Ye | Zendy

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THE CHEMISORPTION OF AI ON THE GaAs(110) SURFACE

Author(s) -

Kaiming Zhang,

Ling Ye

Publication year - 1980

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.29.1613

Subject(s) - chemisorption , dangling bond , adsorption , materials science , surface (topology) , charge (physics) , chemical physics , atomic physics , condensed matter physics , molecular physics , silicon , chemistry , physics , optoelectronics , quantum mechanics , geometry , mathematics

The chemisorption of Al on the GaAs(ll0) surface is studied by using the charge self-consistent EHMO method. In comparing the two different mechanisms of adsorption, the more stable mechanism is determined by the configuration which gives a lower energy, and it is suggested from the present study that Al will substitute the surface Ga atoms, while the latter will be adsorbed on the dangling bonds of the surface As atoms. The charge transfer, the bond strengths and the density of states are also considered.

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