Open AccessA NEW PHENOMENON ABOUT THE {111} PLANAR PARTICLES BLOCKING DIP IN SINGLE CRYSTAL Si
Author(s) -
Wei Cheng-Lian,
Yulan Dong,
Gao Zhi-Wei
Publication year - 1980
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.29.1222
Subject(s) - blocking (statistics) , planar , crystal (programming language) , particle (ecology) , materials science , blocking effect , single crystal , condensed matter physics , crystallography , physics , chemistry , computer graphics (images) , computer science , psychology , developmental psychology , statistics , oceanography , mathematics , programming language , geology
A new phenomenon about {111} planar particles blocking dip in Si has been found. Between the {111} planes in single crystal Si there are two interplanar spacings, d(111)(a) and d(111)(b), but there is only one interplanar spacing d(110) between Si{110} planes, so that their blocking dips would be different. We have observed this difference from the experiments of a particle and proton blocking effect in single crystal Si. We have also estimated the 2ψ1/2 angles from planar particles blocking dips with d(111)(a), d(111)(b) and d(110) in Si respectively. According to the author's knowledge, up to the present, this phenomenon has not yet been discovered at home and abroad. This new phenomenon will promote the study of complex crystals using the blocking and channeling effects.