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A PRELIMINARY STUDY ON THE RELAXATION OF Si(111) SURFACE ATOMS
Author(s) -
Kaiming Zhang,
Ling Ye
Publication year - 1980
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.29.122
Subject(s) - surface (topology) , relaxation (psychology) , plane (geometry) , cluster (spacecraft) , materials science , ideal (ethics) , atomic physics , molecular physics , condensed matter physics , physics , geometry , computer science , mathematics , psychology , social psychology , philosophy , epistemology , programming language
In this paper the Extended Hucker Method is adopted and the Cluster model is used to calculated the surface relaxation of the Si (111) plane. The calculation shows that the surface atoms will be displaced inward with respect to their "ideal" positions by an amount of 0.10?. This expectation is in better agreement with the experimental results than previous empirical evaluations and theoretical calculations.

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