Open AccessELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON
Author(s) -
Mo Dang,
Lu Yin-Cheng,
Li Dan-Hui,
Shanghe Liu,
Lu Wu-Xing
Publication year - 1980
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.29.1214
Subject(s) - materials science , annealing (glass) , amorphous solid , silicon , radiation damage , ion , refractive index , ion implantation , amorphous silicon , arsenic , ellipsometry , radiation , optics , optoelectronics , analytical chemistry (journal) , thin film , composite material , crystalline silicon , nanotechnology , metallurgy , chemistry , crystallography , physics , organic chemistry , chromatography
The ellipsometric method has been developed to investigate the radiation damage and annealing effect in As ion implanted silicon. For 1×1016 cm-2, 150 keV As ion implantation, the refractive index-depth profile exhibits a plateau form, indicating the existence of an amorphous layer. The annealing temperature used to remove amorphous layer must be about 700℃ or higher. The experimental results show that the ellipso-meter is one of the useful tools for radiation damage determinations.