Open AccessTHE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATION
Author(s) -
Feng Xi-Qi,
LUO BIN-ZHANG
Publication year - 1980
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.29.1
Subject(s) - epitaxy , materials science , sublimation (psychology) , silicon carbide , optoelectronics , electroluminescence , silicon , nanotechnology , composite material , psychology , layer (electronics) , psychotherapist
Measurements of the voltage-current characteristics and space-charge capacitance have been made on the epitaxial p-n junctions grown by method of silicon carbidt crystals sublimation. An analysis of the forward voltage-current and voltage-capacitance charateristics shows that the structures of the p-n junction may vary over a quite wide range, from typical p-i-n junctions to nearly linear graded junctions resulted from different epitaxial growth parameters, but most of them have intermidiate structures. The effect of epitaxial growth parameters on structures of p-n junctions is briefly discussed.In addition, The brightness-current characteristics, the spectral distribution of electroluminescence of forward biased epitaxial p-n junctions, and their performance under pulse and a.c. excitions are also described.