THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATION | Zendy

FENG XI-QI | Zendy; LUO BIN-ZHANG | Zendy

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THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATION

Author(s) -

FENG XI-QI,

LUO BIN-ZHANG

Publication year - 1980

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.29.1

Subject(s) - epitaxy , materials science , sublimation (psychology) , silicon carbide , optoelectronics , electroluminescence , silicon , nanotechnology , composite material , psychology , layer (electronics) , psychotherapist

Measurements of the voltage-current characteristics and space-charge capacitance have been made on the epitaxial p-n junctions grown by method of silicon carbidt crystals sublimation. An analysis of the forward voltage-current and voltage-capacitance charateristics shows that the structures of the p-n junction may vary over a quite wide range, from typical p-i-n junctions to nearly linear graded junctions resulted from different epitaxial growth parameters, but most of them have intermidiate structures. The effect of epitaxial growth parameters on structures of p-n junctions is briefly discussed.In addition, The brightness-current characteristics, the spectral distribution of electroluminescence of forward biased epitaxial p-n junctions, and their performance under pulse and a.c. excitions are also described.

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