Open AccessMEASUREMENT OF DEEP LEVEL TRAPS IN GaAs
Author(s) -
Binglin Zhou,
Le Wang,
Shao Yongfu,
Chen Qi-Yu
Publication year - 1979
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.28.350
Subject(s) - capacitance , materials science , conduction band , epitaxy , electron , optoelectronics , deep level transient spectroscopy , transient (computer programming) , electron capture , physics , silicon , nanotechnology , nuclear physics , electrode , layer (electronics) , quantum mechanics , computer science , operating system
Measurements on transient capacitance and thermally stimulated capacitance of N-type GaAs epitaxial materials have been carried out. Electron traps could not be detected in LPE materials. However, two electron traps 0.82 and 0.43 eV below the conduction band have been discovered in VPE materials, the electron capture sections are found to be about 2.0×10-13 and 1.5×10-15cm2 respectively.