MEASUREMENT OF DEEP LEVEL TRAPS IN GaAs | Zendy

Binglin Zhou | Zendy; WANG LE | Zendy; SHAO YONG-FU | Zendy; CHEN QI-YU | Zendy

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MEASUREMENT OF DEEP LEVEL TRAPS IN GaAs

Author(s) -

Binglin Zhou,

WANG LE,

SHAO YONG-FU,

CHEN QI-YU

Publication year - 1979

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.28.350

Subject(s) - capacitance , materials science , conduction band , epitaxy , electron , optoelectronics , deep level transient spectroscopy , transient (computer programming) , electron capture , physics , silicon , nanotechnology , nuclear physics , electrode , layer (electronics) , quantum mechanics , computer science , operating system

Measurements on transient capacitance and thermally stimulated capacitance of N-type GaAs epitaxial materials have been carried out. Electron traps could not be detected in LPE materials. However, two electron traps 0.82 and 0.43 eV below the conduction band have been discovered in VPE materials, the electron capture sections are found to be about 2.0×10-13 and 1.5×10-15cm2 respectively.

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